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Garantía del fabricante: De por vida |
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Hoja de Datos |
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Disponibilidad: ![Producto sin fecha de entrada. Consúltenos para concretarle el plazo](/img/Disp5.gif) |
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Características |
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The TS256MSQ64V6U is a 256M x 64bits DDR2-667 SO-DIMM. The TS256MSQ64V6U consists of 16pcs 128Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS256MSQ64V6U is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications |
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Especificaciones |
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• RoHS compliant products.
• JEDEC standard 1.8V ± 0.1V Power supply
• VDDQ=1.8V ± 0.1V
• Max clock Freq: 333MHZ; 667Mb/s/Pin.
• Posted CAS
• Programmable CAS Latency: 3,4,5
• Programmable Additive Latency :0, 1,2,3 and 4
• Write Latency (WL) = Read Latency (RL)-1
• Burst Length: 4,8(Interleave/nibble sequential)
• Programmable sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended
data-strobe is an optional feature)
• Off-Chip Driver (OCD) Impedance Adjustment
• MRS cycle with address key programs.
• On Die Termination
• Serial presence detect with EEPROM
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+ Recursos de Seguridad |
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Información del fabricante: La información del fabricante no está disponible actualmente. |
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Persona responsable de la UE: La información del Responsable de la UE no está disponible actualmente. |
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