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| Garantía del fabricante: De por vida |
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The TS512MSK64V3N is a 512M x 64bits DDR3-1333 SO-DIMM. The TS512MSK64V3N consists of 16pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board. The TS512MSK64V3N is a Dual In-Line Memory Module and is intended for mounting into 204-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
• RoHS compliant products.
• JEDEC standard 1.5V ± 0.075V Power supply
• VDDQ=1.5V ± 0.075V
• Clock Freq: 667MHZ for 1333Mb/s/Pin.
• Programmable CAS Latency: 6, 7, 8, 9
• Programmable Additive Latency (Posted /CAS): 0, CL-2 or CL-1 clock
• Programmable /CAS Write Latency (CWL) = 7 (DDR3-1333)
• 8 bit pre-fetch Burst Length: 4, 8
• Bi-directional Differential Data-Strobe
• Internal calibration through ZQ pin
• On Die Termination with ODT pin
• Serial presence detect with EEPROM
• Asynchronous reset |
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Información del fabricante:
La información del fabricante no está disponible actualmente. |
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Transcend TS512MSK64V3N 
